![]() Rm - noise Transistor: less than 10 dB at 1 kHz H21e - static current transfer ratio of the transistor small signal for the common-emitter and common-base respectively: 45-100 ĬK - collector junction capacity: no more than 60 pF Ikbo - reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: less than 30 mA Ik max - maximum DC Collector Current: 20 mA Uebo samples - breakdown voltage emitter-base junction reverse current at a given emitter and collector open circuit: 15 V Ukbo samples - breakdown voltage collector-base for a given reverse current collector and emitter open circuit: 15 V Pk max - constant power dissipation Collector: 150 mW įh21b - cut-off frequency of the transistor current gain for the common-emitter H21e - static current transfer ratio of the transistor small signal circuits for theĬommon-emitter and common-base, respectively: 50-100 ĬK - collector junction capacity: no more than 50 pF Reverse voltage for a given collector-base and open emitter output: less than 30 mA Ikbo - reverse collector current - current through the collector junction Ik max - maximum permissible DC Collector Current: 20 mA Uebo samples - breakdown voltage emitter-base reverse currentĪt a given emitter and collector open circuit: 15 V ![]() Ukbo samples - breakdown voltage collector-base for a given reverseĬurrent collector and emitter open circuit: 15 V Pk max - collector power dissipation: 150 mW įh21b - limiting frequency current transfer ratio of the transistorįor the common-emitter and common-base: not less than 2 MHz Maximum collector-emitter voltage (Uce): 30Vįorward current transfer ratio (hFE), min/max: 30/60 Maximum collector-base voltage (Ucb): 30V Maximum collector power dissipation (Pc): 150mW Maximum junction temperature (Tj), ☌: 120įorward current transfer ratio (hFE), min: 9 ![]() Maximum collector current |Ic max|, A: 0.05 Maximum emitter-base voltage |Ueb|, V: 10 Maximum collector-emitter voltage |Uce|, V: 0 Maximum collector-base voltage |Ucb|, V: 30 Maximum collector power dissipation (Pc), W: 0.15 This is the extremely rare transistors, and where is no any info on most of them, cause they were manufactured for the defense industry, but we hope that you can build a super sounding FUZZ pedal, based on these unknown military transistors, why not? So, here is what we have here: We mashed up the most interesting transistors in one 10PCS set, these transistors dated from 1967-1972, some of them marked "ВП", which means that they were manufactured for military engineering. Up for sale is a comprehensive set of SOVIET military germanium transistors!
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